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Data Sheet
RB876W
10
100
1000
0.001 0.01 0.1 1 10 100 1000TIME:t(s)
Rth(j-a)
Rth(j-c)
1ms
IM=1mA
IF=10mA
300us
time
Mounted on epoxy board
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
FORWARD CURRENT:IF(mA)
REVERSE CURRENT:IR(uA)
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
VF DISPERSION MAP
FORWARD VOLTAGE:VF(mV)
REVERSE CURRENT:IR(uA)
IR DISPERSION MAP
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ct DISPERSION MAP
Rth-t CHARACTERISTICS
TRANSIENT
THAERMAL IMPEDANCE:Rth (℃/W)
ELECTROSTATIC
DDISCHARGE TEST ESD(KV)
ESD DISPERSION MAP
0.01
0.1
1
10
0 300 600 900 1200 1500
1
10
100
1000
012345
0.1
1
012345
f=1MHz
250
260
270
280
290
300
AVE:275.2mV
Ta=25℃
IF=1mA
n=30pcs
0
50
100
150
200
250
300
Ta=25℃
VR=5V
n=30pcs
AVE:21.63uA
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
AVE:0.520pF
Ta=25℃
f=1MHz
VR=1V
n=10pcs
0
1
2
3
4
5
AVE:0.48kV
AVE:1.47kV
C=100pF
R=1.5kΩ
C=200pF
R=0Ω
Ta=-25℃
Ta=125℃
Ta=25℃
Ta=75℃
Ta=-25℃
Ta=125℃
Ta=75℃
Ta=25℃
2/2
2011.04 - Rev.B
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